| PART |
Description |
Maker |
| 30PUB60 |
Miniature Power Relay, 1 Form C, 10A 250VAC 10A 125VAC, 6A 277VAC
DIODE - 3A 600V 27ns
|
NIEC[Nihon Inter Electronics Corporation]
|
| RJQ6021DPM |
600V - 10A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| Z86L7908PSC |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Holding Current:50mA 8位微控制
|
INTEGRAL JOINT STOCK COMPANY
|
| Z8913829ASC Z8913920FSC |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Holding Current:50mA
8-BIT MICROCONTROLLER 8位微控制
|
TOKO, Inc.
|
| STGP10NB60SDFP |
20 A, 600 V, N-CHANNEL IGBT, TO-220AB
N-CHANNEL 10A - 600V - TO-220FP PowerMesh⑩ IGBT
N-CHANNEL 10A - 600V - TO-220FP PowerMesh IGBT
N-CHANNEL 10A 600V TO-220FP POWERMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| 2SC3360 |
High DC current gain.hFE=90 to 450 High voltage VCEO=200V
|
TY Semiconductor Co., Ltd
|
| STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND ST |
N-channel 600V - 0.37ヘ - 10A - FDmesh⑩ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
N-channel 600V - 0.37Ω - 10A - FDmesh?/a> II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
N-channel 600V - 0.37Ω - 10A - FDmesh II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
N-channel 600V - 0.37楼? - 10A - FDmesh垄芒 II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
|
STMicroelectronics
|
| 1N4246GP 1N4247GP 1N4248GP 1N4245 1N4245GP |
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 400V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 600V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 800V
General Purpose Plastic Rectifier, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 200V
|
Vishay
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| STW10NB60 6241 |
N-CHANNEL Power MOSFET
N - CHANNEL 600V - 0.69 - 10A - TO-247 PowerMESH TM MOSFET
From old datasheet system
N - CHANNEL 600V - 0.69ohm - 10A - TO-247 PowerMESH MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
